Product Summary

The FM25CL64-G is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. Unlike serial EEPROMs, the FM25CL64-G performs write operations at bus speed. No write delays are incurred. The device provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. It uses the high-speed SPI bus, which enhances the high-speed write capability of FRAM technology.

Parametrics

Absolute maximum ratings:(1)VDD, Power Supply Voltage with respect to VSS: -1.0V to +5.0V; (2)VIN, Voltage on any pin with respect to VSS: -1.0V to +5.0V and VIN < VDD+1.0V; (3)TSTG, Storage Temperature: -55°C to + 125°C; (4)TLEAD, Lead Temperature (Soldering, 10 seconds): 300° C; (5)VESD, Electrostatic Discharge Voltage:Human Body Model (JEDEC Std JESD22-A114-B):4kV; Machine Model (JEDEC Std JESD22-A115-A):300V; (6)Package Moisture Sensitivity Level: MSL-1.

Features

Features:(1)64K bit Ferroelectric Nonvolatile RAM: Organized as 8,192 x 8 bits; Unlimited Read/Write Cycles;NoDelay Writes; Advanced High-Reliability Ferroelectric Process; (2)Very Fast Serial Peripheral Interface - SPI:Up to 16 MHz Frequency;Direct Hardware Replacement for EEPROM;SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1); (3)Sophisticated Write Protection Scheme:Hardware Protection;Software Protection; (4)Low Power Consumption: Low Voltage Operation 3.0-3.6V;15 μA Standby Current; (5)Industry Standard Configuration: Automotive Temperature -40°C to +125°C;Green/RoHS 8-pin SOIC.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FM25CL64-G
FM25CL64-G

Ramtron

F-RAM 64K (8Kx8) 2.7V

Data Sheet

Negotiable 
FM25CL64-GA
FM25CL64-GA

Ramtron

F-RAM 64K (8Kx8) 2.7V 877-FM24C512-G

Data Sheet

Negotiable 
FM25CL64-GTR
FM25CL64-GTR

Ramtron

F-RAM 64K (8Kx8) 2.7V

Data Sheet

Negotiable 
FM25CL64-GATR
FM25CL64-GATR

Ramtron

F-RAM 64K (8Kx8) 2.7V Grade 1

Data Sheet

Negotiable